Piezoelectric Effect in GaInN/GaN Heterostructure and Quantum Well Structure
نویسندگان
چکیده
منابع مشابه
Optical Properties of GaInN/GaN Heterostructures and Quantum Wells
Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved...
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تاریخ انتشار 2003